Model: ET-150LDQF (Custom versions for 400℃, 500℃ and 800℃ are available)

The HCTD / HCHD series near-infrared high-temperature heating devices with adjustable atmosphere are developed for process development and application configuration of solar cells, compound semiconductors and other products. This high-speed heating and cooling unit integrates an infrared reflection furnace and temperature controller, equipped with a compact quartz heat treatment chamber. Customization is available to meet personalized requirements.

Small and medium-sized high-temperature furnaces are widely applied in industrial production and scientific research. Traditional furnaces mostly adopt molybdenum disilicide rods and silicon carbide rods as heating elements, which feature slow heating rate, incapability of simulating variable temperature environments and poor compatibility with diverse atmospheres.

Our newly developed industrial and laboratory special infrared high-temperature furnaces are featured with rapid heating, variable temperature simulation, customizable infrared heating bands, infrared reflective coating for heat preservation and adjustable atmosphere. A single device can work under ambient air, vacuum and inert gas conditions. Specialized furnaces of this type have been widely developed abroad, while there is still a market gap in China.

The HCTD and HCHD series near-infrared high-temperature heating devices with adjustable atmosphere are ideal for process development and application setup of solar cells and compound semiconductors. Combined with infrared reflection furnace, temperature controller and compact quartz heat treatment chamber, the equipment achieves fast heating and cooling performance. Custom service is provided upon request.

1. A multi-channel air hole module is built into the cover, with controllable gas inlet and outlet ports on the side. It is compatible with air tubes of 8mm, 10mm and 12mm outer diameter, which can be connected to air compressors, gas cylinders and other air sources (user-provided).
2. Adopting 3D stereo air channel design, it greatly extends the gas flow path. The incoming normal-temperature gas can be heated rapidly to prevent glass samples from cracking caused by sudden temperature drop.
3. Equipped with high-power heating plate to avoid obvious temperature drop when gas flows through.
4. Air holes are evenly distributed within 110mm×110mm area to ensure uniform atmosphere inside the chamber.
5. Three large circular heat sinks are installed at the pipe connection end to reduce surface temperature and prevent pipeline damage and scalding.

1. Supports high-temperature heating under flowing atmosphere, providing adjustable protective gas flow for samples during operation.
2. Protect air-sensitive samples from oxidation and humidity-sensitive samples from moisture absorption.
3. Suitable for high-temperature sintering of semiconductor electrode films. Carbonized polymers can be carried away by airflow without blocking nanopores, optimizing pore-forming performance.
4. Wide adjustable range of heating rate from fast to slow.
5. Supports multi-step heating and cyclic heating, and realizes high-speed gas quenching with gas cooling system.
6. Temperature programs and external signals can be set conveniently via computer.
7. Real-time temperature data can be displayed on computer during operation.

1. Conventional high-temperature heating up to 600℃, with adjustable heating rate from room temperature to 600℃.
2. High-temperature heating under controllable flowing protective atmosphere.
3. Protect air-sensitive and humidity-sensitive samples against deterioration.
4. High-temperature sintering of semiconductor electrode films to improve product quality.

• Heat treatment of solar cell substrates
• Material heat treatment under specific atmosphere
• Basic material research & atmosphere annealing treatment
• Gradient temperature simulation heat treatment
• Thermal cycle and thermal shock testing
• Sintering and process annealing for semiconductor materials