Heating Plate Applications in Semiconductor Industry
Precise temperature control is essential in semiconductor manufacturing. Our heating plates are widely used in wafer processing, chip packaging, and device heat treatment. With uniform temperature, high vacuum resistance, high cleanliness, and high precision, they meet strict process requirements and ensure high chip yield and stable performance.
12-inch Wafer Drying Heating Plate After RCA Cleaning
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Working Condition: 12-inch silicon wafer drying after RCA cleaning, moisture ≤0.02%, prevent pinholes and warpage.
Configuration: 600×400mm ceramic plate, 120℃, ±2.5℃ uniformity, Class 100 clean.
Results: Moisture ≤0.015%, pinhole rate 8%→1%, yield increased by 12%.
ALD Vacuum Heating Plate (300mm)
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Working Condition: 300mm wafer ALD film deposition, vacuum 10⁻³~10⁻⁶Pa, ultra-uniform temperature.
Configuration: AlN ceramic, 200–500℃, ±0.1℃ precision, ±0.3℃ uniformity.
Results: Film thickness 3σ 0.8%→0.3%, particle <1/100cm².
Rapid Thermal Processing (RTP) Heating Station
Image AreaWorking Condition: 8/12-inch wafer annealing after ion implantation, doping activation.
Configuration: Multi-zone ceramic, 400–1100℃, 5–50℃/s, ±0.5℃ uniformity.
Results: Resistance deviation <2%, time reduced by 60%, capacity improved.
Heating/Cooling Module for Tester
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Working Condition: Chip test -55℃ to +175℃, automotive & industrial chip verification.
Configuration: Integrated module, ±0.1℃ precision, compatible with ASM/AMAT.
Results: MTBF>20,000h, efficiency increased by 35%.
Wafer Bonding Heating Plate
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Working Condition: 8/12-inch wafer bonding & wafer-glass bonding.
Configuration: Φ315mm alloy, RT–250℃, vacuum chuck, flatness ≤0.02mm.
Results: No bubbles/cracks, yield ≥99%.
SiC/GaN High-Temperature Heating Plate
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Working Condition: Third-gen semiconductor annealing, oxidation, metallization.
Configuration: High-purity ceramic, 600–1000℃, 50,000 cycles life.
Results: Defect density reduced by 40%, suitable for high-end processes.
